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Effect of spark plasma sintering process on dielectric properties of CaCu3 Ti4 O12 ceramics

机译:火花等离子体烧结工艺对CaCu 3 Ti 4 O 12 陶瓷介电性能的影响

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CaCu3Ti4O12 (CCTO) ceramics with high density were fabricated by spark plasma sintering (SPS) method. In order to study the effect of sintering methods on properties of CCTO ceramics, the samples were sintered at different temperatures (750 °C, 800 °C and 850 °C) , and then were annealed in air at 1000 °C for 3 hours. The crystalline-phase characters and surface morphology of the samples were characterized by XRD and SEM measurements, and XRD pattern revealed the formation of pure cubic perovskite CCTO. The average grain size was measured to be 1.5-2.2 μm and the relative density reached about 98 %. The non-ohmic characteristics, dielectric properties and impedance response of the ceramic samples were studied by precision highvoltage dc power and impedance spectroscopy. For the sample SPS-750, the electric breakdown field was enhanced to 13.05 kV/cm, and the nonlinear coefficient was increased to 5.69. The great enhancement in electric breakdown field was accompanied with the lowest dielectric loss of 0.013 at around 1 kHz. The maximum stored energy density of CCTO was also promoted to 35.21 kJ/m3. The results showed that the dielectric loss of spark plasma sintered CCTO ceramics can be reduced significantly and the current-voltage properties can also be enhanced, which are ascribed to the improvement of grain boundary resistance during the sintering and annealing treatment.
机译:钙铜 3 4 Ø 12 通过火花等离子体烧结(SPS)方法制备了高密度(CCTO)陶瓷。为了研究烧结方法对CCTO陶瓷性能的影响,将样品在不同温度(750°C,800°C和850°C)下烧结,然后在空气中于1000°C退火3小时。通过XRD和SEM测量表征了样品的晶相特征和表面形态,XRD图谱显示了纯立方钙钛矿CCTO的形成。测得平均晶粒尺寸为1.5-2.2μm,相对密度达到约98%。通过精密高压直流电源和阻抗谱研究了陶瓷样品的非欧姆特性,介电特性和阻抗响应。对于样品SPS-750,电击穿场增强到13.05 kV / cm,非线性系数增加到5.69。电击穿场的极大增强伴随着大约1 kHz的最低介电损耗0.013。 CCTO的最大存储能量密度也提高到35.21 kJ / m 3 。结果表明,火花等离子体烧结CCTO陶瓷的介电损耗可以大大降低,电流-电压特性也可以得到提高,这归因于烧结和退火处理过程中晶界电阻的提高。

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