Studying of thin film growth and annealing processes on early stage by computer simulation

摘要

Computer simulation of thin film growth and annealing processes on early stage at atomic and molecular level is one of the most important stages to study and increase high quality of obtained thin films or coatings. And in this paper, the computer simulation will be presented at different conditions to show which influence facts and their contribution on the quality of obtained films based on built models and algorithms. Basic numerical methods used in this work is a combination of two methods based on the specifics of thin film growth, in the random and self organization processes, we use Monte-Carlo method with a choice of number of particles and quasi-Newton method with the definition of the direction of particle's motion. Based on the kind of on-going process and deposition (or sputtering) materials, various sub models are built.