Analysis and Simulation of Negative Capacitance Independent Multi-Gate FinFETs

摘要

In this paper, we introduce a novel negative-capacitance device, named as Negative-Capacitance Independent Multi-Gate FinFET (NC-IMG-FinFET), by stacking a thin ferroelectric (FE) layer into the front gate stack of a baseline traditional independent Multi-Gate FinFET (IMG-FinFET). The capacitance model of the proposed NC-IMG-FinFET is addressed, and then its characteristics and performance are simulated by HSPICE. The simulation results demonstrated that the NC-IMG-FinFET exhibits more excellent electrical characteristics compared with that of the traditional IMG-FinFET, in terms of smaller Sub-threshold Swing (SS) (42mV/dec at room temperature), smaller off-state current, bigger on-state current, and better electrostatic control of the back-gate electrode for the threshold voltage. It is expected that this work may provide some help to the low power applications of integrated circuits.