Compact 5G N79 Band Pass Filter Based on HR-Silicon IPD Technology

摘要

This paper uses high-resistance silicon-based IPD technology to design a band-pass filter applied to the N79 band of 5G communication. Its operating frequency is 4.4GHz-5GHz, and it uses a hybrid topology of multi-zero low-pass and highpass cascade. The design area of the band-pass filter is 2mm*1.5mm, and the area is compact. Through the analysis of the inductance design and the optimization of the component values, the performance of the passband loss is less than 2dB, the low frequency suppression is greater than 40dB, and the high frequency suppression is greater than 20dB, which has a good selection performance. Finally, the processing and testing of the physical object are completed. The results of the physical test are basically consistent with the simulation, which is suitable for the system-in-package design of the N79-band high-performance RF front-end.