Cross Point Cu-ReRAM with BC-Doped Selector

摘要

Cross point ReRAM is a promising candidate for Storage Class Memory (SCM) application. We have developed both of our original Cu-ReRAM and BC-doped OTS selector material technologies. Cu-ReRAM shows the best variability and operational window margin among reported ReRAMs. BC-doped Selector achieved outstanding performance of cycling endurance, Vth drift and leakage current. Additives of Boron and Carbon improve thermal stability above 400oC, showing compatibility for process integration at the same time. 1S1R memory cell of combination of Cu-ReRAM and BC-doped OTS matches well and shows excellent performance to enable Mbit class cross point array.