Organolead trihalide perovskite as light absorber for IGZO phototransistor

摘要

A IGZO transistor is capped with needle-like organolead trihalide perovskite (MAPbI) layer for photo detection application. The MAPbI capped IGZO phototransistor demonstrates excellent responsivities and sensitivities to light in both UV and visible region. Furthermore, fast transient response has been achieved without persistent photocurrent (PPC) behavior.