Optimal multi-row detailed placement for yield and model-hardware correlation improvements in sub-10nm VLSI

摘要

In sub-10nm, nodes, a change or step in diffusion height between adjacent standard cells causes yield loss as well as a form of model-hardware miscorrelation called neighbor diffusion effect (NDE). Cell libraries must inevitably have multiple diffusion heights (numbers of fins in PFETs and NFETs) in order to enable flexible exploration of the power-performance envelope for design. However, this brings step-induced risks of NDE, for which guardbanding is costly, as well as yield loss. Special filler cells can protect against harmful NDE effects, but are costly in terms of area. In this work, we develop dynamic programming-based single-row and double-row detailed placement optimizations that optimally minimize the impacts of NDE. Our algorithms support a richer set of cell movements than in previous works - i.e., flipping, relocating and reordering within the original row; we also consider cell displacement and flipping costs. Importantly, to our knowledge, our dynamic programming-based optimal detailed placement algorithm is the first to handle multiple rows with multiple-height cells that can be reordered. We further develop a timing-aware approach, which is capable of recovering (or, improving) the worst negative slack (WNS) by creating additional diffusion steps around timing-critical cells.