A Neural Network Method to Model Nanoscale FinFET Performance

摘要

This paper presents a neural network method to model nanometer FinFET performance. The principle of this method is firstly introduced and its application in modeling DC and conductance characteristics of nanoscale FinFET transistor is demonstrated in detail. It is shown that this method does not need parameter extraction routine while its prediction of the transistor performance has a small relative error within 1% compared with measured data, thus this new method is as accurate as the physics based surface pontential model.