A multiband fully integrated high-linearity power amplifier using a 0.18-μm CMOS process for LTE applications

摘要

This paper presents a multiband high-linearity power amplifier (PA) for long-term evolution (LTE) applications at 1.8/2.1/2.3/2.5/2.6 GHz in the Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm 1P6M CMOS process. The proposed PA includes a switch, which is a CMOS varactor, a driver stage, which is a CMOS resistor inverter, and a power stage, which uses a cascode structure and feedback technique. The fully integrated PA delivers 21-dBm output power in the overall band for a 50-Ω load with an average power gain of 22.98 dB.