New steep-slope device of comprehensive properties enhancement with hybrid operation mechanism for ultra-low-power applications

摘要

A kind of new steep-slope device with hybrid operation mechanism, which is multi-finger Schottky barrier TFET (MFSB-TFET), is presented for the comprehensive electric properties enhancement, by using the strong points but avoiding the critical issues of different mechanisms. The device can experimentally achieve higher on current from the dominant Schottky current, appreciably reduced off-leakage current from self-depletion effect, and steeper slope from dominant tunneling current with enhanced junction electric field. From circuit design perspective, the MFSB-TFET performance in terms of output behavior, capacitance, delay, gain, noise, variability and reliability are also experimentally benchmarked. The MFSB-TFET with comprehensively superior performance shows great potentials for ultra-low-power circuit applications.