Bright single InAs quantum dots at telecom wavelengths in site-selective InP nanowires

摘要

Non-classical light sources that can produce streams of correlated on-demand photons are a central building block for optics based quantum information technologies. There are numerous possible approaches for producing such a light source. One of the most promising is the solid-state single photon source based on a single quantum dot in III-V semiconductors. Utilizing a single InAs quantum dot in an InP nanowire, we previously demonstrated a bright and efficient source for single photons [1] and entangled photon pairs [2] that emits around 950 nm. In order to interface with telecom systems, single photon sources emitting at longer wavelengths are required. A few works have extended the emission to the telecom band using a single InAs/InP quantum dot in a micro-cavity [3-4]. However, improving the source brightness and the extraction efficiency remains a challenging task. In this contribution, by modifying the growth conditions and the pre-growth pattern for an InAs dot in an InP nanowire, we demonstrate a bright light source that emits in the telecom O-band, an important step towards the demonstration of a single photon source.