A study on parasitic inductance reduction design in GaN-based power converter for high-frequency switching operation

摘要

This report studies the influence of printed circuit board (PCB) design on voltage overshoot and ringing oscillation in switching operation of gallium nitride gate injection transistor (GaN-GIT) for high-frequency DC-DC converter. The parasitic inductances in the main power loop have been identified based on moment of method (MoM) analysis and frequency characteristics of impedance measured with 2-port shunt-thru method. The measured switching characteristics of GaN-GIT in a 5 MHz DC-DC boost converter shows that a small-ESL ceramic capacitor connected across the DC-link can reduce the effective power loop inductances and can improve both voltage overshoot and the damping of ringing oscillation.