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Effects of negative oxygen ions generated during Sc ingot sputtering on electromechanical coupling of ScAlN film

机译:Sc晶锭溅射过程中产生的负氧离子对ScAlN薄膜机电耦合的影响

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ScAlN films are well-researched for GHz acoustic wave devices. Large-area growth techniques of ScAlN films are necessary for the practical application. A single sputtering source with a ScAl alloy metal target is suitable for the film growth from the point of view of the composition stability. However, it is difficult to alloy Al with Sc in the large-size target. Therefore, a mosaic target of Sc and Al metals is reasonable for the large-area growth. In previous study, we demonstrated Sc ingot sputtering deposition [1] in which Sc ingots were set on an Al metal target as similar conditions with the mosaic target. Oxidization of Sc ingots was seriously problem in this method because the c-axis orientation of ScAlN films was degraded by bombardment with O-negative ions generated from the target. In this study, we investigated the effects of the negative ion bombardment on the crystalline orientations and piezoelectric properties.
机译:ScAlN膜已被广泛研究用于GHz声波设备。 ScAlN膜的大面积生长技术对于实际应用是必需的。从组成稳定性的观点来看,具有ScAl合金金属靶的单个溅射源适合于膜生长。但是,难以在大型靶中使Al和Sc合金化。因此,Sc和Al金属的镶嵌目标对于大面积生长是合理的。在先前的研究中,我们展示了Sc锭溅射沉积[1],其中Sc锭设置在Al金属靶上,其条件与镶嵌靶相似。在这种方法中,Sc锭的氧化是一个严重的问题,因为ScAlN膜的c轴取向会受到靶标产生的O负离子的轰击而降低。在这项研究中,我们研究了负离子轰击对晶体取向和压电性能的影响。

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