Design and Analysis of a Low-Inductive Power-Semiconductor Module with SiC T-MOSFET and Si IGBT in Parallel Operation

摘要

In a hybrid system, the parallel operation of SiC-Trench MOSFET and Si IGBT is analyzed with focus on operating conditions and the consequences for the performance. By addressing different control schemes in the gate circuit for the parallelized switches, optimized operating parameters are presented and the impact on the performance is discussed. It is shown that the switching performance of the hybrid system can be broadly varied and high switching frequencies can be reached by addressing more sophisticated control schemes, e.g. differently timed turn-off signals. A comparison of single devices and hybrid system is performed and clear decision criteria on the utilization of hybrid systems are presented.