Investigation and comparison of design space for ultra-thin-body GeOI/SOI negative capacitance FETs

摘要

Using the concept of design space, we have investigated and compared the subthreshold characteristics of UTB NCFETs with Ge/Si channel. Our results indicate that high permittivity channel is more suitable for NCFET design because of the high C. Furthermore, as channel length shrinks, the optimal SS of the NCFET becomes smaller due to the drain coupling (C). In other words, GeOI NCFETs can achieve lower SS than the Si counterpart due to their higher C and C.