SPICE simulation of RRAM circuits. A compact modeling perspective

摘要

Two different compact models for resistive RAM (RRAMs) with filamentary conduction are compared in depth. One model describes RRAMs where conductive filaments (CFs) change their geometry laterally while the other model takes into consideration vertical variations of the CF. The role of the conductive filament (CF) ohmic resistance and the temperature evolution is carefully studied. The models have been implemented in SPICE to analyze circuits under step pulsed signals and voltage ramps. A single non-volatile memory cell using a NMOS transistor as selector device is studied in depth.