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Development of a MEMS electrostatic condenser lens array for nc-Si surface electron emitters of the Massive Parallel Electron Beam Direct-Write system

机译:大规模平行电子束直接写入系统的nc-Si表面电子发射器的MEMS静电电容透镜阵列的开发

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Developments of a Micro Electro-Mechanical System (MEMS) electrostatic Condenser Lens Array (CLA) for a Massively Parallel Electron Beam Direct Write (MPEBDW) lithography system are described. The CLA converges every parallel electron beams for fine patterning. The structure of the CLA was designed on a basis of analysis by a finite element method (FEM) simulation. The lens was fabricated with precise machining and assembled with a nanocrystalline silicon (nc-Si) electron emitter array as an electron source of MPEBDW. The nc-Si electron emitter has the advantage that a vertical-emitted surface electron beam can be obtained without any extractor electrodes. FEM simulation of electron optics characteristics showed that the size of the electron beam emitted from the electron emitter was reduced to 15% by a radial direction, and the divergence angle is reduced to 1/18.
机译:描述了用于大规模平行电子束直接写入(MPEBDW)光刻系统的微机电系统(MEMS)静电会聚透镜阵列(CLA)的开发。 CLA会聚每个平行的电子束,以进行精细图案化。 CLA的结构是在通过有限元方法(FEM)模拟进行分析的基础上设计的。该透镜经过精密加工制造,并与作为MPEBDW的电子源的纳米晶体硅(nc-Si)电子发射器阵列组装在一起。 nc-Si电子发射器的优点是无需任何引出电极即可获得垂直发射的表面电子束。电子光学特性的有限元模拟表明,从电子发射器发射的电子束的尺寸在径向方向上减小到15%,发散角减小到1/18。

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