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CMOS-memristor inverter circuit design and analysis using Cadence Virtuoso

机译:使用Cadence Virtuoso的CMOS忆阻器逆变器电路设计与分析

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Memristor is known for its primary fundamental property called the variation of resistance with memory and time, thus memristor name combines memory plus resistor. That's why the major applications for memristors are investigated solely in the field of neuromorphic systems and memory. This paper investigates the benefits of combining CMOS logic along with memristors. It is because of the way that this field is currently existing in its initial phases of exploration, different sorts of models exists in memristor, and no specific agreement which suggests the best portray of physical properties. All together further exploration is regardless until the consideration of hybrid memristor. memristor is considered for implementation of logic groups like the memristors as logic inside memory, memristance as calculation units. The paper incorporates the usage of CMOS-memristor combination Inverter utilizing Cadence Virtuoso. Its DC response is registered at different input Voltages and contrasted with standard CMOS 180 nanometer technology.
机译:忆阻器的主要基本特性称为电阻随存储器和时间的变化,因此忆阻器的名称是存储器加电阻的组合。这就是为什么仅在神经形态系统和记忆领域研究忆阻器的主要应用的原因。本文研究了将CMOS逻辑与忆阻器结合在一起的好处。由于该领域目前处于勘探初期阶段的方式,忆阻器中存在不同类型的模型,并且没有明确的协议表明物理性质的最佳描绘。在考虑混合忆阻器之前,所有的进一步探索都是无关紧要的。忆阻器被认为是用于逻辑组的实现,例如忆阻器是内存中的逻辑,忆阻器是计算单元。本文结合了利用Cadence Virtuoso的CMOS忆阻器组合逆变器的用法。其直流响应在不同的输入电压下记录,并与标准CMOS 180纳米技术形成对比。

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