Optimizing FinFET parameters for minimizing short channel effects

摘要

This paper discusses the effect of RE-GAA FinFET parameter on short channel characteristic. The Fin height, width and gate oxide thickness are varied and its effect on short channel characteristics like Ion, Ioff, DIBL, sub-threshold swing are observed. The simulated results demonstrate the dependency of DIBL on Fin thickness instead of Fin height. The increase in the height of the Fin results in the enhancement of on current and this consequently decreases the off current. Additionally, EOT shows a greater influence on sub-threshold swing.