Design and implementation of HEMT based class-E power amplifier for 60 Ghz

摘要

Class E Power Amplifier for 60 Giga Hertz have been implemented based on stacking methodology in 130nm Advanced Design System. Stacking of devices in a Power Amplifier increases the required achievable voltage swing at the output, which helps in an increase of output power and efficiency of the circuitry. A comparison between Class-E Radio Frequency Power Amplifier based on SiGe HBT with Class-E switching Power amplifier based on GaAs HEMT is proposed in the paper. The Power Amplifier at 60 GHz operates with 0.75V supply voltage with consumed power of 8mW. The HEMT based Class-E Switching Power Amplifier at 60 GHz has been demonstrated with an improvement in noise figure, output power, Power Added Efficiency with respect to HBT based Class-E switching PA. The maximum power delivered of HBT based Class-E PA and HEMT based Class-E is 14 dBm and 16 dBm respectively. While the maximum power added efficiency of HBT based Class-E Amplifier and HEMT based Switching Power Amplifier is 15 % and 30 % respectively.