Double-gate Ge, In As-based tunnel FETs with enhanced ON-current

摘要

In this correspondence, a novel approach to enhance ON-current in Tunnel Field Effect Transistor (TFET) using Synopsys Sentaurus TCAD simulation has been proposed. In this paper, we proposed Ge-based, InAs-based double-gate Tunnel FETs (DGTFETs), for which the simulations show significant enhancement in ON-current when compared with single-gate Tunnel FETs. The both DGTFETs fulfills the high-performance ON-current is 0.85 mA for Ge DGTFET, 11.8 mA for InAs DGTFET and low-stand-by power OFF-current nearly 10 15 A for both transistors, an ION /IOFF ratio is found to be more than 1012 for both transistors, which shows Tunnel FET devices are suitable candidates to meet ITRS low-off-state-power specifications. InAs-based (narrow band-gap material) DGTFET shows more ON-current when compared with Ge-based DGTFET. The best attractive result of our structure is III-V compound semiconductor TFETs, which are suitable for low power electronics with high-ON current.