Multiband HEMT low noise amplifier for 2 to 5 GHz

摘要

This paper presents 2 to 5 GHz Multiband Low Noise Amplifier (LNA) using a HEMT technology for multiband receiver. The circuit is designed using an inductively-degenerated cascode topology with voltage shunt feedback to improve the gain and noise figure of the LNA. The designed LNA exhibits a forward transfer gain S21 above 12dB, Noise Figure (NF) of less than 1.5 dB and input reflection coefficient S11 below -10dB across a 2-5 GHz band with a supply voltage of 3V.