Full band Monte Carlo simulation of impact ionization in wide bandgap semiconductors based on ab initio calculation

摘要

A full band Monte Carlo simulation based on ab initio calculations is presented to investigate high-field carrier transport characteristics. The band structure and the impact ionization rate of wide bandgap semiconductors are calculated based on a quasiparticle selfconsistent GW method. Then, we demonstrate the full band Monte Carlo simulation in diamond to investigate the electron and hole ionization coefficients. It is shown that the estimated breakdown fields are in good agreement with the experimental data of n+p- one-sided abrupt junctions with the acceptor density less than 1017 cm-3.