Modeling Sinusoidally Driven Self-Directed Channel Memristors

摘要

In this work, the problem of memristors modeling is investigated. The elements under study are self-directed-channel memristors with a tungsten dopant fabricated by the Knowm Inc. Memristors are exited using a sinusoidal waveform. Three existing memristor models are considered: the Strukov model, the Biolek model, and the VTEAM model. Additionally, an asymmetric Strukov model is considered. Parameters of the models are fitted to experimental data using the interior-point optimization algorithm. Based on the results obtained comparison of models is carried out.