Modelling the generic TiO2 memristor with the parasitic components

摘要

In this paper the problem of existence of parasitic components in a real memristor has been analysed. These unwanted components have some impacts on behaviour of the memristors causing discrepancies in the observed dynamic characteristics. To model this kind of behaviour additional L and C elements have to be introduced in the memristor model. Simulation tests have been carried out to uncover the changes of behaviour caused by the introduced parasitics. Several graphs show comparisons between characteristics of an ideal element and the model of real one with parasitics.