Compact Modeling of TIO2-TIO2-X Memristor.

摘要

We developed a SPICE-compatible compact model of TiO2-TiO2-x memristors based on classic ion transportation theory. Our model is shown to simulate important dynamic memristive properties, e.g., the doping front motion and realtime memristance switching, which are critical in memristor-based analog circuit designs. The model, as well as its analytical approximation, is validated with the experimentally obtained data from real devices. Minor deviations of our model from the measured data are also analyzed and discussed.