Automotive-grade P-channel Power MOSFETs for Static, Dynamic and Repetitive Reverse Polarity Protection

机译：用于静态，动态和重复性反极性保护的汽车级P沟道功率MOSFET

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The latest P-channel trench technology qualified for automotive applications (according to AEC Q101) from STMicroelectronics is able to provide an outstanding performance in terms of: - low Qrr which allows a quick current flowing interruption in case of reverse polarity events - high ruggedness versus repetitive pulse sequence, according to ISO 7637 Pulse 1 condition.

机译：最新的P沟道沟槽技术资格用于来自STMicroelectronics的汽车应用（根据AEC Q101），能够提供出色的性能： - 低QRR，在反极性事件的情况下，允许快速流动的中断 - 高坚固性与重复脉冲序列，根据ISO 7637脉冲1条件。

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《International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management》|2016年|1-5|共5页
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Filippo Scrimizzi; Giuseppe Longo; Giusy Gambino;
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1. Using Mosfets for reverse polarity protection [J] . Nicholas Vinen Silicon Chip . 2012,第4期

机译：使用Mosfets进行反极性保护
2. NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions [J] . I. Manic, D. Dankovic, A. Prijic, Microelectronics reliability . 2011,第9a11期

机译：在静态和脉冲NBT应力条件下，p沟道功率VDMOSFET中与NBTI相关的退化和寿命估算
3. Novel degradation effects in dynamically stressed p-channel MOSFETs [J] . Bergonzoni C., Libera G.D. IEEE Transactions on Electron Devices . 1992,第5期

机译：动态应力p沟道MOSFET中的新型劣化效应
4. Automotive-grade P-channel Power MOSFETs for Static, Dynamic and Repetitive Reverse Polarity Protection [C] . Filippo Scrimizzi, Giuseppe Longo, Giusy Gambino International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management . 2016

机译：汽车级P沟道功率MOSFET，用于静态，动态和重复的反极性保护
5. Reverse Engineering of Java Programs through Static and Dynamic Analysis to generate Scenario Diagrams [D] . Kolbah, Bojana 2011

机译：通过静态和动态分析对Java程序进行逆向工程以生成方案图
6. Multi-objective optimization of MOSFETs channel widths and supply voltage in the proposed dual edge-triggered static D flip-flop with minimum average power and delay by using fuzzy non-dominated sorting genetic algorithm-II [O] . Farshid Keivanian, Nasser Mehrshad, Abolfazl Bijari -1

机译：拟议的双边沿触发静态D型触发器中的MOSFET沟道宽度和电源电压的多目标优化采用模糊非支配排序遗传算法II
7. The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs [O] . Kosier Steven Louie 1966- 1990

机译：电离辐射对p沟道功率MOSFET击穿电压的影响

Automotive-grade P-channel Power MOSFETs for Static, Dynamic and Repetitive Reverse Polarity Protection

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