Vth is dead - long live the threshold voltage

摘要

In this paper a comprehensive analysis of 12 different extraction methods for the threshold voltage Vth is presented. Accounting for the emerging needs of advanced technology nodes the methods are evaluated with TCAD simulations of FDSOI, Bulk and Fin MOSFET devices. The presented analysis provides Figures of Merit in order to choose the most suited extraction method for modeling purposes or determining the impact of degradation. Additionally, a maximum measurement noise can be ascertained ensuring reliable extracted values of Vth for any measurement setup. The recognition capability is analyzed for each method, leading to a measurable minimal ΔVth of a single transistor.