Dark current analysis of P-type and N-type pixels under total ionizing dose radiation effects

摘要

In this paper, a custom-designed CMOS image sensor (CIS) is proposed with N-type and P-type pixels fabricated on one chip. A Co radiation experiment is implemented on the proposed CIS chip. Measurement results shows that the P-type pixels have good total ionizing dose (TID) radiation tolerance with less radiation induced dark current compared with N-type pixels. But the dark current nonuniformity of P-type pixels is observed to be enhanced more than N-type ones by TID radiation effect.