A Novel Multi-Functional Silicon-On-ONO (SOONO) MOSFETs for SoC applications: Electrical Characterization for High Performance Transistor and Embeded Memory Applications

摘要

We proposed and successfully demonstrate multi-functional Si-on-ONO (SOONO) MOSFETs. As a high performance transistor and embedded 2-bit flash memory, they show the reasonable characteristics. SOONO MOSFETs act as ultra thin body transistor with self-limited shallow junction, resulting in good SCE immunity and high driving currents, 737μA/μm for nMOS and 330μA/μm for pMOS at 1V{sub}(GS)1=1V{sub}(DS)1=1V, I{sub}(OFF)=100nA/μm). In terms of flash memory, SOONO MOSFET acts as 2-bit flash memory with 2 physically separated storage node in back side. By using CHEI/HHI program/erase, each node was easily programmed and erased. In the gate length of 120nm, we achieved the read/write margins of ～1.3 V at V{sub}(DS)=1.2V and the V{sub}(TH) shifts of ～2.5V for both program/erase.