首页> 外文OA文献 >Tunnel Junction-Embedded Field-Effect Transistor for Negative Differential Resistance and Its Multi-Valued Logic and Memory Applications

【2h】

Tunnel Junction-Embedded Field-Effect Transistor for Negative Differential Resistance and Its Multi-Valued Logic and Memory Applications

机译：用于负差分电阻的隧道结嵌入式场效应晶体管及其多值逻辑和存储器应用

页面导航

摘要
著录项
相似文献
相关主题

摘要

Device Physics

机译：装置物理

著录项

作者
Shin Sunhae;
展开▼
作者单位

展开▼
年度 2013
总页数
原文格式 PDF
正文语种 en
中图分类

相似文献

外文文献
中文文献
专利

1. Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications [J] . Mikkelson C.H., Seabaugh A.C. IEEE Transactions on Electron Devices . 1994 ,第2期

机译：用于多值逻辑/存储器应用的耦合量子阱场效应谐振隧穿晶体管
2. Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications [J] . Shin Sunhae, Kim Kyung Rok Japanese journal of applied physics . 2015 ,第6S1期

机译：多个负差分电阻器件，具有超高的峰谷电流比，适用于实际的多值逻辑和存储器应用
3. Multi-valued logic design methodology with double negative differential resistance transistors [J] . Yuchao Ji, Sheng Chang, Hao Wang, Micro & Nano Letters, IET . 2017 ,第10期

机译：双负差分电阻晶体管的多值逻辑设计方法
4. Unipolar complementary bistable memories using gate-controlled negative differential resistance in a 2D-2D quantum tunneling transistor [C] . Simmons, J.A., Blount, . 1997

机译：在2D-2D量子隧穿晶体管中使用栅极控制的负差分电阻的单极互补双稳态存储器
5. Fabrication and Characterization of III-V Tunnel Field-Effect Transistors for Low Voltage Logic Applications. [D] . Romanczyk, Brian R. 2013

机译：用于低压逻辑应用的III-V隧道场效应晶体管的制造与表征。
6. Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory [O] . Shigeki Sakai, Mitsue Takahashi 2010

机译：铁电栅极场效应晶体管的最新进展及其在非易失性逻辑和FeNAND闪存中的应用
7. β‑Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications [O] . Mengwei Si, Lingming Yang, Hong Zhou, 2017

机译：具有陡峭亚阈值斜率的β-Ga2O3纳米膜负电容场效应晶体管用于宽带隙逻辑应用
8. Negative Resistance of a Modified Insulated-Gate Field-Effect Transistor. [R] . Lehovec, K., Zuleeg, R. 1974

机译：改进的绝缘栅场效应晶体管的负阻。

Tunnel Junction-Embedded Field-Effect Transistor for Negative Differential Resistance and Its Multi-Valued Logic and Memory Applications

摘要

著录项

相似文献

相关主题

期刊订阅