Direct three-dimensional observation of the conduction in poly-Si and In1−xGaxAs 3D NAND vertical channels

摘要

Nanoscopic details of the conduction in 3D NAND vertical channels are unraveled by a novel slice-and-view tomographic technique, Scalpel SPM. The structural and electrical properties of poly-Si and single crystalline In1-xGaxAs of 45 nm channel diameters are explored/revealed. The impact of the grain boundaries (GBs) in poly-Si and of the material segregation in In1-xGaxAs are shown, thus providing a direct correlation between the channel materials and the electrical performance of the device.