Growth and characterization of high strain InGaAs/GaAs quantum well by molecular beam epitaxy

摘要

High indium composition In_xGa_(1-x)As/GaAs quantum wells (x＞0.4) in which the well width reached to 7 nm without relaxing were grown on (100) GaAs substrates by MBE. The good crystal quality and optical properties of the high strained InGaAs/GaAs QW were obtained by controlling quasi-2D growth model and optimizing the growth condition including the growth temperature, growth rate, and Ⅴ/Ⅲ BEP ratio. Photoluminescence (PL) showed that the cutoff wavelength was about 1.3μm at room temperature with narrow full width at half maximum below 30meV. Dilute nitrogen and high In composition InGaAsN/GaAs QW extended wavelength infrared photodetectors at 1. 3 and 1.55 μm were also realized.