Electrical design for lateral junction photonic crystal lasers

摘要

We model conduction and free-carrier injection in laterally doped GaAs p-i-n diodes formed in one and two-dimensional photonic crystal (PC) nanocavities. Finite element simulations show that the lateral geometry exhibits high electrical conductivity for a wide range of PC parameters and allows for precise control over current flow, enabling efficient carrier injection despite fast surface recombination. Thermal simulations indicate that the temperature increase during steady-state operation is only 3.3K in nanobeams and 0.29K in L3 defect nanocavities. The results affirm the suitability of lateral doping in PC devices and indicate criteria for further design optimization.