Modeling and simulation of high gain monolayer MoS2 photodetector

摘要

Monolayer MoS2 photodetectors are modeled and simulated by self-consistently solving diffusive transport equations in the presence of light illumination with the two-dimensional (2-D) Poisson equation. The simulated results indicate that very high photoresponsivity (PR) of ~1000A/W observed in others' experiments is due to strong electrostatic effect of pile up of optically generated holes, and efficient optical absorption. PR is highly dependent on gate bias.