Electrothermal characterization of SOI FinFETs

摘要

Electrothermal characterization of the advanced SOI FinFETs is performed in this paper, which is based on some analytical equations as well as in-house developed finite difference algorithm. The temperature-dependent properties of thermal conductivities of all materials involved are considered in our simulation, with results validated by the commercial software ANSYS and other analytical solution. The self-heating effects (SHE) in such FinFET at 50nm node are further investigated, and some analytical equations are derived for fast predicting the maximum temperature in its channel. On the other hand, transient temperature response under the circuit-speed random stress is also studied, which is mimicked by the Pseudo Random Binary Sequence signal. It is found that the AC and PRBS signals introduce the similar transient temperature response, while the lower frequency signal induces the worse self-heating effect.