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Discussion on the influences of townsend ionization coefficient α and secondary electron emission coefficient γ on the characteristics of DBD

机译:探讨汤森电离系数α和二次电子发射系数γ对DBD特性的影响

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Dielectric barrier discharge (DBD) has drawn great attentions in recent years, and the discharge physic is one of the research focuses. In this paper, both Townsend ionization coefficient α and secondary electron emission coefficient γ (SEEC) in DBD are discussed. The value and partial derivative of α in pure helium are compared with that of argon theoretically, which is related to the breakdown voltage and discharge channel radius. The changes of discharge channel radius under different electrical field is obtained, and the high nonlinear relationship between α and electrical field (∂(α)/∂(E)) is believed to be the main reason for discharge contraction. Therefore, we mix a little NH3 in argon to make the α different from that of pure argon and work in the region where the ∂(α/∂(E) is relatively low. In this way, the uniform discharge, similar with He-DBD, can be obtained in the Ar/NH3 DBD.The SEEC y of dielectric is another important parameter in gas discharge. Different types of Townsend discharge is achieved, the value range of y in various dielectrics is estimated based on y(eαd-1) ≈1. The y in He-DBD and N2-DBD is studied and compared to clarify the gas species' effects on y as well. The electron trap feature of dielectric surface and gas species energy are used to explain the changes of y. Moreover, the cathode falling thickness of different dielectric surface is measured according to the luminous structure when DBD is in glow-like discharge region, which may be affected by γ.
机译:介质阻挡放电(DBD)近年来引起了人们的广泛关注,放电物理是研究的重点之一。本文讨论了DBD中的Townsend电离系数α和二次电子发射系数γ(SEEC)。从理论上将纯氦中的α值和偏导数与氩中的α值进行了比较,这与击穿电压和放电通道半径有关。得到了在不同电场下放电通道半径的变化,并且α与电场之间的高非线性关系(∂(α)/∂(E))被认为是放电收缩的主要原因。因此,我们在氩气中混入少量的NH3,使α与纯氩气不同,并在∂(α/∂(E)相对较低的区域内工作。电介质的SEEC y是气体放电的另一个重要参数,可实现不同类型的Townsend放电,根据y(eαd-1)估算各种电介质中y的取值范围)≈1。研究并比较了He-DBD和N2-DBD中的y,以阐明气体种类对y的影响,并利用电介质表面的电子陷阱特征和气体种类的能量来解释y的变化。而且,当DBD处于辉光状放电区域时,根据发光结构来测量不同介电表面的阴极降落厚度,该发光结构可能受到γ的影响。

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