Exploratory power noise models of standard cell 14, 10, and 7 nm FinFET ICs

摘要

The physical dimensions of standard cells constrain the dimensions of power networks, affecting the on-chip power noise. An exploratory modeling methodology is presented for estimating power noise in advanced technology nodes. The models are evaluated for 14, 10, and 7 nm technologies to assess the impact on performance. Scaled technologies are shown to be more sensitive to power noise, resulting in potential loss of performance enhancements achieved by scaling. Stripes between local track rails is evaluated as a means to reduce power noise, exhibiting up to 56.5% improvement in power noise for the 7 nm technology node. A strong dependence on the width of a stripe is observed, indicating that fewer wide stripes are more favorable then many thin stripes. As a promising alternative material for power network interconnects, graphene is shown to exhibit good potential in reducing power noise. The effects of different scaling scenarios of local power rails on power noise are also discussed.