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Electrochromic properties of single-crystalline tungsten trioxide films grown by molecular beam epitaxy

机译:分子束外延生长的单晶三氧化钨薄膜的电致变色性能

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C-axis oriented single-crystalline monoclinic WO3 films were grown by molecular beam epitaxy, and studied their properties by fabricating solution-gate electrochromic devices in H2SO4 aqueous solution. These devices exhibited reversible change in the following three states; a colored state with low electrical resistivity after biasing a positive gate voltage, a transparent state with low electrical resistivity after biasing a negative gate voltage, and another transparent state with high electrical resistivity after thermal annealing. At the former two states, the c-axis length of the monoclinic WO3 films was found to expand slightly compared with that of the latter state after annealing. These results were consistently explained in terms of the protonation and hydration of WO3.
机译:通过分子束外延生长C轴取向单晶单斜晶WO3薄膜,并通过在H2SO4水溶液中制造溶液门电致变色器件研究其性能。这些设备在以下三种状态下表现出可逆的变化:在偏置正栅极电压之后具有低电阻率的着色状态,在偏置负栅极电压之后具有低电阻率的透明状态以及在热退火之后具有高电阻率的另一透明状态。在前两种状态下,发现单斜晶WO3薄膜的c轴长度与退火后的后一种状态相比略有扩大。这些结果在WO 3的质子化和水合方面得到了一致的解释。

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