Effects of nonparabolic band structure on intrinsic carrier concentration in In0.53Ga0.47As

摘要

This paper describes the effects of the nonparabolic band structure on the intrinsic carrier concentration in In0.53Ga0.47As. In order to investigate the effects of the nonparabolic band structure on the intrinsic carrier concentration, we calculated the temperature dependence of the relative error of the intrinsic carrier concentration given by the nonparabolic and parabolic band structure of the conduction band in In0.53Ga0.47As. It is found that it is essential to consider nonparabolicity of the band structure of the conduction band to obtain the more accurate value of the intrinsic carrier concentration in In0.53Ga0.47As.