Graphene-Based Nanostructures for Advanced Sensing Applications

摘要

Nanostructured Schottky junctions based on graphene/platinum grown on different silicon substrates are fabricated and investigated for sensing applications. Carrier transport mechanisms are interpreted on the basis of studying the band diagrams and theoretical models, both of which verified tunneling as the dominant charge transport in the device. Investigations verified that sensing behavior is dominated by the carrier distribution function at the metal-semiconductor junction, which further implies that substrate's resistivity, fabrication temperature and doping level have an insignificant effect on the sensing behaviors. Application of the device for infrared sensing is demonstrated.