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MODELING THERMAL SPREADING RESISTANCE IN VIA ARRAYS

机译:在阵列中模拟热扩散阻力

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As thermal management techniques for 3D chip stacks and other high power density electronic packages continue to evolve, interest in the thermal pathways across substrates containing a multitude of conductive vias has increased. To facilitate the use of numerical models that can reduce computational costs and time in the thermal analysis of through-layer via (TXV) structures, much research to date has focused on defining effective anisotropic thermal properties for a pseudo-homogeneous TXV medium using isothermal boundary conditions. While such an approach eliminates the need to model heat flow through individual vias, the resulting properties can be shown to depend on the specific boundary conditions applied to a unit TXV cell. More specifically, effective properties based on isothermal boundary conditions fail to capture the local "micro-spreading" resistance associated with more realistic heat flux distributions and local hot spots on the surface of these substrates. This work assesses how the thermal spreading resistance present in arrays of vias in interposers, substrates, and other package components can be properly incorporated into the modeling of these arrays. We present the conditions under which spreading resistance plays a major role in determining the thermal characteristics of a via array and propose methods by which designers can both account for the effects of spreading resistance and mitigate its contribution to the overall thermal behavior of such substrate-via systems. Finite element modeling of TXV unit cells is performed using commercial simulation software (ANSYS). Compactly stated, micro-spreading contributes to the total resistance R_T = R_(1D) + (f_u+ f_l)R_(sp,max) where 0 ≤ f ≤ 1 are adjustment factors that depend on the conditions at the upper and lower surfaces of the via array layer and R_(sp,max) occurs under worst-case conditions.
机译:随着用于3D芯片堆叠和其他高功率密度电子封装的热管理技术的不断发展,人们对跨过包含多个导电过孔的基板的热通道的兴趣日益增加。为了方便使用可以减少通孔(TXV)结构热分析中的计算成本和时间的数值模型,迄今为止,许多研究都集中在使用等温边界定义伪均质TXV介质的有效各向异性热特性上。情况。虽然这种方法消除了对通过单个通孔的热流进行建模的需求,但可以显示所得的特性取决于应用于单元TXV单元的特定边界条件。更具体地说,基于等温边界条件的有效特性不能捕获与这些衬底表面上更实际的热通量分布和局部热点相关的局部“微扩散”电阻。这项工作评估了中介层,基板和其他封装组件中的过孔阵列中存在的热扩散阻力如何正确地纳入这些阵列的建模中。我们介绍了在确定通孔阵列的热特性时扩散电阻起主要作用的条件,并提出了一些方法,通过这些方法,设计人员既可以考虑扩散电阻的影响,又可以减轻其对此类衬底通孔的整体热性能的影响。系统。使用商用仿真软件(ANSYS)对TXV晶胞进行有限元建模。简而言之,微扩散有助于总电阻R_T = R_(1D)+(f_u + f_1)R_(sp,max),其中0≤f≤1是调整因子,取决于在上,下表面的条件。通过阵列层和R_(sp,max)发生在最坏情况下。

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