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MECHANICAL SHOCK RELIABILITY ANALYSIS AND MULTIPHYSICS MODELING OF MEMS ACCELEROMETERS IN HARSH ENVIRONMENTS

机译:恶劣环境中MEMS加速器的机械冲击可靠性分析和多物理场建模

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MEMS accelerometers have found applications in harsh environments with pressure, temperatures above ambient conditions, high g shock and vibrations. The complex structure of these MEMS devices has made it difficult to understand the failure modes and failure mechanisms of present day MEMS accelerometers. Little work has been done by the researchers in investigating the high g reliability of the MEMS accelerometers by continuous high g drops and quantifying the failure modes. There is little literature addressing the multiphysics finite element modelling of MEMS accelerometers subjected to high g shocks. In defense applications, where these devices are integrated with several other compactly assembled subsystems, lack of knowledge on the physics of failure for the MEMS sensor in harsh environment operation, can be detrimental to the success of the system on the whole. Being able to successfully model inside of an accelerometer, enables the user to better understand the change in parameters like time delay induced in response of successive drops, change in pulse width that indicate failure, reduction in sensed g levels. Some researchers have subjected various accelerometers to repeated drops at their maximum sensing g(not high g) level, and used optical microscopy to detect damaged sensing elements [Beliveau,1999]. Few researchers have modeled the internal structure of the MEMS device, along with the device packaging under the stresses of operation [Fang 2004, Ghisi 2008, Xiong 2008]. In this paper, a multiphysics model of capacitive and the moving elements of the accelerometer has been developed to model the change in capacitance with respect to stroke and understand the correlation with g-levels, in addition to the transient dynamic response of the accelerometer under high-g shock. This has not been much explored in the past. The accelerometer studied in the paper is the ADXL193, and subjected to repeated drops of 3000g in each 3 axes as per 2002.4 of MIL-STD-883 without preconditioning. A characteristic graph of capacitance vs accelerometer stroke has been obtained from a series of electrostatic simulations and is then used to relate g levels, capacitance, stroke deflection and voltage change using electromechanical transducer elements. The drift in the performance characteristics of the accelerometer have been measured versus the number of shock events. In addition, an attempt has been made to investigate the failure mode in the accelerometer.
机译:MEMS加速度计已发现在压力,高于环境条件的温度,高g冲击和振动的恶劣环境中应用。这些MEMS器件的复杂结构使其难以理解当今MEMS加速度计的故障模式和故障机理。研究人员在通过连续不断的高g滴下降和量化故障模式来研究MEMS加速度计的g高可靠性方面所做的工作很少。很少有文献涉及承受高g冲击的MEMS加速度计的多物理场有限元建模。在将这些设备与其他几个紧凑组装的子系统集成在一起的国防应用中,缺乏关于在恶劣环境下运行的MEMS传感器的故障物理知识,可能会损害整个系统的成功。能够成功地在加速度计内部建模,使用户能够更好地理解参数的变化,例如响应于连续滴落而引起的时间延迟,指示故障的脉冲宽度变化,感测到的g值降低。一些研究人员使各种加速度计在其最大感测g(不是高g)水平下反复滴下,并使用光学显微镜检测损坏的感测元件[Beliveau,1999]。很少有研究人员在操作压力下对MEMS器件的内部结构以及器件封装进行建模[Fang 2004,Ghisi 2008,Xiong 2008]。在本文中,除了加速度计在高压力下的瞬态动态响应外,还开发了一个电容式和加速度计运动元件的多物理场模型,以模拟相对于行程的电容变化并了解与g级的相关性。 -g震撼。过去没有对此进行过多探讨。本文研究的加速度计是ADXL193,并且根据MIL-STD-883的2002.4,在每3个轴上重复跌落3000g,而无需进行预处理。电容与加速度计行程的特性图已从一系列静电模拟中获得,然后使用机电换能器元件将其与g电平,电容,行程偏斜和电压变化相关联。已经测量了加速度计性能特征的漂移与冲击事件的数量之间的关系。另外,已经尝试调查加速度计中的故障模式。

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