Measurement of secondary electron emission yield on the surface of lead silicate glass by time of flight (ToF)

摘要

In order to clarify the mechanism on electron multiplication of MCP, it is necessary to study the secondary electron emission properties of inner wall surface. The secondary electron emission is not completely required by materials or devices, and sometimes it can bring bad effects such as noise. In addition to the secondary electron produced by electron colliding with the inner wall, there are additional secondary electrons produced by the ionized cation colliding with the inner wall, which is the key to control the noise of MCP. In this paper, the secondary electron emission produced by the ionized cation colliding with the inner wall of MCP was analyzed after the materials were acid and alkaline treated and hydrogen reduced at high temperature. Time of Flying (ToF) was used to detect secondary electron emission yield (SEEY) of lead silicate glass surface. By comparative analyses, the influence trend of surface treatment process on the secondary electron emission yield of glass surface was acquired. It is expected to provide data supports for parameters optimization of MCP manufacture and preparation of MCP with high signal to noise ratio (SNR).