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Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potential reducing the secondary-electron yield at a semiconductor surface

机译：从SnTe（001）表面镜面反射的0.5-MeV / u H，He和Li离子的二次电子发射：表面走线电势可能会降低半导体表面的二次电子产率

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Kimura K; Usui S; Nakajima K;
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年度 2000
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1. Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potential reducing the secondary-electron yield at a semiconductor surface - art. no. 062902 [J] . Kimura K., Nakajima K., Usui S. Physical Review, A. Atomic, molecular, and optical physics . 2000,第6期

机译：从SnTe（001）表面镜面反射的0.5-MeV / u H，He和Li离子产生二次电子：表面走线电位的可能性会降低半导体表面的二次电子产率。没有。 062902
2. Secondary-electron emission by MeV He ions reflected from a SnTe(001) surface: Separation of above- and below-surface processes - art. no. 012901 [J] . Kimura K., Andou G., Nakajima K., Physical Review, A. Atomic, molecular, and optical physics . 2000,第1期

机译：MeV He离子从SnTe（001）反射的二次电子发射：分离上表面和下表面工艺-艺术。没有。 012901
3. Modeling of the Influence of the Thickness of an Insulating Film on a Cathode Surface on its Effective Secondary-Electron Emission Yield in Low-Current Gas Discharge [J] . V. I. Kristya, Myo Thi Ha, M. R. Fisher Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2019,第2期

机译：模拟绝缘膜厚度对阴极表面上的影响低电流气体排放中的有效二次电子发射产量
4. Swcondary electron emission from SnTe(001) and KCl(001) surfaces induced by specularly reflected protons [C] . G.Andou, S.Ooki, K.Nakajima, International conference on application of accelerators in research and industry . 1999

机译：通过镜面反射质子诱导的SNTR（001）和KCl（001）表面的二次电子发射
5. Theoretical analysis of the optical properties of GaAs(001) surfaces and the strain-dependent lattice properties of semiconductors [D] . Eryigit, Resul 1997

机译：GaAs（001）表面的光学性质的理论分析和半导体的应变依赖性晶格特性
6. Surface determination through atomically resolved secondary-electron imaging [O] . J. Ciston, H. G. Brown, A. J. DAlfonso, -1

机译：通过原子分辨二次电子成像确定表面
7. Secondary-electron emission by MeV He ions reflected from a SnTe(001) surface: Separation of above- and below-surface processes [O] . Kimura K, Ooki S, Andou G, 2000

机译：从SnTe（001）表面反射的MeV He离子产生的二次电子：上表面和下表面过程的分离

Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potential reducing the secondary-electron yield at a semiconductor surface

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