A study of CMOS SOI for RF, Microwave and millimeter wave applications

摘要

With recent technique advancement, CMOS silicon-on-insulator (SOI) technology seems to be attractive for the implementation of the RF, Microwave and millimeter-wave circuits and systems due to its excellent feature of lower loss, lower noise and good power handling capabilities as compared to its CMOS counterpart. This paper is going to study the state of the art CMOS SOI processes and the applications of CMOS SOI in the RF and mm-wave front-end building blocks such as switch, LNA, PA etc. as well as the systems for commercial and noncommercial applications.