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Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

机译:解决垂直STT-MRAM中器件和芯片级的热稳定性在尺寸上不一致的矛盾

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Current understanding of thermal stability of perpendicular STT-MRAM based on device-level data suggests that the thermal stability factor A is almost independent of device diameter above ¿¿¿30nm. Here we report that contrary to this conventional wisdom, chip-level data retention exhibits substantial size dependence for diameters between 55 and 100 nm. We show that the method widely used to measure A is inaccurate for devices larger than ¿¿¿30 nm, leading to significant underestimation of the size dependence. We derive an improved model, allowing us to reconcile the size dependence of A measured at device and chip level.
机译:目前基于设备级数据的垂直STT-MRAM的热稳定性的理解表明,热稳定因子A几乎与¿¿30nm以上的装置直径无关。在这里,我们认为与这种传统智慧相反,芯片级数据保留表现出大小依赖于55至100nm之间的直径。我们表明,对于大于¿¿¿30nm的设备,广泛用于测量A的方法是不准确的,导致大小依赖性的显着低估。我们得出了一种改进的模型,允许我们调和在设备和芯片级别测量的尺寸依赖性。

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