Application-oriented performance of RF CMOS technologies on flexible substrates

摘要

Ultimate-thinning-and-transfer-bonding (UTTB) of RF SOI-CMOS chips is demonstrated on plastic, metal and glass substrates. Beyond process simplicity, UTTB can be tailored to meet specific application requirements like ultra mechanical flexibility, heat dissipation, transparency while retaining same fT/fmax performance and improving harmonic rejection when compared to conventional rigid SOI.