MOSFET; adders; carry logic; low-power electronics; power consumption; silicon-on-insulator; CMOS implementation; DTMOS design; NMOS device; PMOS device; Si; UTBB FD-SOI; back-bias control; energy consumption; fully-depleted silicon-on-insulator technology; low voltage ripple carry adder; low-granularity dynamic forward back-biasing; size 28 nm; ultra-thin body and box; CMOS integrated circuits; Decision support systems; Electron devices; Energy efficiency; Erbium; Logic gates; Optimization; FD-SOI; gate-level body biasing; single well;
机译:利用28 nm UTBB FD-SOI中的栅极电平动态体偏置的低压逻辑电路
机译:28-NM UTBB FD-SOI CMOS技术中常规性电压的闭合形式分析
机译:具有28nm UTBB FD-SOI CMOS的3 GHz双核处理器ARM Cortex TM -A9,具有超宽电压范围和能源效率优化
机译:低电压纹波在28 nm utbb fd-soi中携带具有低粒度动态前向偏置的加法器
机译:湍流中沙纹波动动力学的数值研究。
机译:像素间距匹配的超声接收器用于在28nm UTBB FD-SOI中集成Delta-Sigma波束形成器的3D光声成像
机译:采用前向体偏置调谐的450mHz Gm-C三阶低通滤波器,采用28nm UTBB FD-sOI,在0.7至1V电源下具有> 1dBVp IIp3