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High performance low temperature sintered microwave dielectric ceramics prepared by solid-state reaction

机译:通过固态反应制备的高性能低温烧结微波介质陶瓷

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In this work, a multi-step solid reaction method was introduced for preparing high performance low temperature sintered microwave dielectric ceramics. The CaO-SiO-BO ternary system was investigated as a model material. Samples with different Ca/B/Si ratios were prepared. The phase composition, microstructure, and microwave dielectric properties were studied. The major crystalline phases of the studied compositions were CaSiO, CaBO, and SiO. Bar-like crystallized phase were observed from the scanning electron microscopy images. Among these studied compositions, the 42%CaO-26%BO-32%SiO component showed excellent microwave dielectric properties with a dielectric constant of 6.2 and Q·f value of 28200 (@13 GHz) at a sintering temperature of 980°C. The low dielectric loss attributes to the glass-free process and highly crystallized phase compositions. The sintering temperature could be reduced to 900°C by adding the BBAS material, and a dielectric constant of 5.9 and Q·f value of 11200 (@13 GHz) was obtained. The low temperature sintered ceramic is cofirable with Ag electrode.
机译:在这项工作中,引入了一种多步固式反应方法,用于制备高性能低温烧结微波介质陶瓷。 CAO-SIO-BO三元系统被研究为模型材料。制备具有不同CA / B / Si比率的样品。研究了相组合物,微观结构和微波介电性能。研究的组合物的主要晶相是Casio,Cabo和SiO。从扫描电子显微镜图像中观察律晶状结晶相。在这些研究的组合物中,42%CaO-26%BO-32%SiO组分在烧结温度为980℃的烧结温度下显示出优异的微波介电性能,其介电常数为6.2和Q·F值为28200(@ 13GHz)。低介电损耗属性至无玻璃工艺和高结晶的相组合物。通过添加BBA材料,可以将烧结温度降低至900℃,得到5.9和Q·F值的介电常数为11200(13GHz)。低温烧结陶瓷用Ag电极可提供。

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